Noise correlation in dual-collector magnetotransistors

Experimental results of low frequency (1/f) noise in magnetic-field-sensitive dual-collector bipolar transistors are presented that show a strong positive correlation between the noise voltages (converted from corresponding fluctuations in the currents) of the collectors. Hence, operating the magnet...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-06, Vol.36 (6), p.1073-1075
Main Authors: Nathan, A., Baltes, H.P., Briglio, D.R., Doan, M.T.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
CMOS technology
Electronics
Exact sciences and technology
Fluctuations
Frequency conversion
Low-frequency noise
Magnetic field measurement
Magnetic noise
Noise reduction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal to noise ratio
Transistors
Voltage
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Summary:Experimental results of low frequency (1/f) noise in magnetic-field-sensitive dual-collector bipolar transistors are presented that show a strong positive correlation between the noise voltages (converted from corresponding fluctuations in the currents) of the collectors. Hence, operating the magnetotransistor in a differential mode yields very favorable signal-to-noise ratios, even for low magnetic sensitivity. Calculations performed for a magnetotransistor with a sensitivity of only 0.06/T yields a field resolution of 25 nT/ square root Hz at 1 kHz, in contrast to 14 mu T/ square root Hz in single-ended operation.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.24350