Ultra-low-noise cryogenic high-electron-mobility transistors

Quarter-micrometer gate-length high-electron-mobility transistors (HEMTs) for cryogenic low-noise application with very low light sensitivity have been developed. At room temperature, these exhibit a noise figure of 0.4 dB with associated gain of 15 dB at 8 GHz. At a temperature of 12.5 K the minimu...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1988-03, Vol.35 (3), p.249-256
Main Authors: Duh, K.H.G., Pospieszalski, M.W., Kopp, W.F., Ho, P., Jabra, A.A., Chao, P.-C., Smith, P.M., Lester, L.F., Ballingall, J.M., Weinreb, S.
Format: Article
Language:English
Subjects:
Chaos
Circuit noise
Contact resistance
Cryogenics
Electronics And Electrical Engineering
HEMTs
MESFETs
MODFETs
Noise figure
Noise generators
Temperature sensors
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Summary:Quarter-micrometer gate-length high-electron-mobility transistors (HEMTs) for cryogenic low-noise application with very low light sensitivity have been developed. At room temperature, these exhibit a noise figure of 0.4 dB with associated gain of 15 dB at 8 GHz. At a temperature of 12.5 K the minimum noise temperature of 5.3+or-1.5 K has been measured at 8.5 GHz, which is the best noise performance observed to date for any microwave transistors. The results clearly demonstrate the potential for low-temperature low-noise applications.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.2448