Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode (3bRTD) that can be depleted by the action of side gates. The 3bRTD features a double peak current-voltage characteristic in which the second valley current is l...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1994-02, Vol.41 (2), p.132-137
Main Authors: Mikkelson, C.H., Seabaugh, A.C., Beam, E.A., Luscombe, J.H., Frazier, G.A.
Format: Article
Language:English
Subjects:
Applied sciences
Current-voltage characteristics
Diodes
Electrodes
Electronics
Electrons
Exact sciences and technology
FETs
Indium phosphide
Logic circuits
Multivalued logic
Resonant tunneling devices
RLC circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode (3bRTD) that can be depleted by the action of side gates. The 3bRTD features a double peak current-voltage characteristic in which the second valley current is less than the first valley current. Combination of the resonant tunneling transistor and a constant current load is shown to yield both binary and ternary logic and memory functions.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.277388