A microscopic study of transport in thin base silicon bipolar transistors

A comprehensive study of electron transport within silicon bipolar transistors with varying base widths is conducted using a rigorous microscopic model, the scattering matrix approach. Results are presented for the base transit time, current, and the velocity and concentration profiles as a function...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-06, Vol.41 (6), p.1027-1033
Main Authors: Stettler, M.A., Lundstrom, M.S.
Format: Article
Language:English
Subjects:
Applied sciences
Ballistic transport
Bipolar transistors
Boltzmann equation
Boundary conditions
Distribution functions
Electron microscopy
Electronics
Exact sciences and technology
Modems
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Space charge
Transistors
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Summary:A comprehensive study of electron transport within silicon bipolar transistors with varying base widths is conducted using a rigorous microscopic model, the scattering matrix approach. Results are presented for the base transit time, current, and the velocity and concentration profiles as a function of basewidth. Unlike previous analyses which artificially impose boundary conditions for the distribution function at the edges of the base, this study rigorously treats transport through both the emitter and collector space charge regions. The results are then compared with other transport models and reveal that even for very thin bases a properly modified drift-diffusion expression gives surprisingly good agreement with the rigorous model for the transit time and current. Finally, an analysis of the distribution function at the collector edge of the base shows that the electron velocity can exceed the thermal velocity (2k/sub B/T//spl pi/m*) in a zero-field region, contrary to the assumptions of several authors.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.293317