Analysis of new high-voltage bipolar Silicon-On-Insulator transistor with fully depleted collector

A new type of high voltage bipolar transistor for implementation in SOI material (Silicon-On-Insulator) has been developed. It is shown by measurements on fabricated structures and by numerical device simulations that the current drive capability of such a transistor is comparable to what has been a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1995-01, Vol.42 (1), p.172-177
Main Authors: Arnborg, T., Litwin, A.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Bipolar transistors
Current measurement
Dielectric substrates
Electronics
Exact sciences and technology
Insulation
Numerical simulation
Plugs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
Transistors
Voltage
Wafer bonding
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Summary:A new type of high voltage bipolar transistor for implementation in SOI material (Silicon-On-Insulator) has been developed. It is shown by measurements on fabricated structures and by numerical device simulations that the current drive capability of such a transistor is comparable to what has been achieved in a conventional transistor with buried layer and plug or in any optimized lateral transistor with buried emitter and collector layers. The new type of transistor designed in a few micrometer thick silicon layer has a breakdown voltage BV/sub CEO/ in excess of several hundreds volts and also a remarkably high Early voltage of about 400 volts. This unique Early voltage is also explained in detail by a new analytical model. The transistor is expected to have a strong impact on the feasibility to realize mixed analog and digital signal circuits with high and low voltage functions on the same chip.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.370020