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Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimensional bipolar physical model
Using a 2-D bipolar physical model we highlight the main parameters that govern the long-wavelength MSM PD performance (cutoff frequency and responsivity). This covers applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also report that using a backside ill...
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Published in: | IEEE transactions on electron devices 1995-02, Vol.42 (2), p.231-238 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Using a 2-D bipolar physical model we highlight the main parameters that govern the long-wavelength MSM PD performance (cutoff frequency and responsivity). This covers applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also report that using a backside illumination technique and a thin absorbing layer we can reach a cutoff frequency as high as 65 GHz with a responsivity of 0.2 A/W.< > |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.370075 |