Optimization of fully-implanted NPNs for high-frequency operation

With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPNs have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the epi. A low-stress silicon rich nitride layer is proven e...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1996-06, Vol.43 (6), p.1038-1040
Main Authors: Nanver, L.K., Goudena, E.J.G., van Zeijl, H.W.
Format: Article
Language:English
Subjects:
Boosting
Boron
Breakdown voltage
CMOS process
Cutoff frequency
Diodes
Doping profiles
Resists
Scalability
Silicon
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPNs have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the epi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.502142