Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

• Published in: IEEE transactions on electron devices 1990-04, Vol.37 (4), p.980-993
• Main Authors: Heremans, P., Van den Bosch, G., Bellens, R., Groeseneken, G., Maes, H.E.
• Format: Article
• Language: English
• Subjects: Applied sciences; Charge carrier processes; Cryogenics; Degradation; Electromigration; Electron traps; Electronics; Exact sciences and technology; Hot carriers; MOSFET circuits; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stress; Temperature dependence; Threshold voltage; Transistors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.52433

The generation of fast interface traps due to channel hot-carrier injection in n-channel MOS transistors is investigated as a function of stress temperature. The relative importance of the mechanisms for the generation of fast interface traps by hot electrons and hot holes is shown to be independent of the temperature. In all cases the generation of fast interface traps is slightly reduced at lower temperatures. The degradation of transistor I/sub d/-V/sub g/ characteristics, on the other hand, is strongly enhanced at lower temperatures. This is explained by a previously suggested model on the temperature dependence of the influence of the local narrow potential barrier, induced at the drain junction as a result of degradation, on the reverse-mode current characteristics. It is shown that only a minor part of the large current reduction at low temperatures can be ascribed to enhanced electron trapping.< >