An integrated PIN/MISS OEIC for high current photoreceiver applications

A new PIN/MISS photoreceiver with very high output current has been developed by using the combination of an amorphous silicon germanium alloy PIN photodiode and a metal-insulator-semiconductor switch (MISS) device. The developed photoreceiver uses a PIN photodiode as the light absorption structure...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-01, Vol.44 (1), p.34-38
Main Authors: Fang, Y.K., Kun-Hsien Lee, Kun-Hsien Wu, Chung-Yang Tsao
Format: Article
Language:English
Subjects:
Amorphous silicon
Fabrication
FETs
Germanium alloys
HEMTs
MODFET circuits
Optoelectronic devices
PIN photodiodes
Switches
Very large scale integration
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Summary:A new PIN/MISS photoreceiver with very high output current has been developed by using the combination of an amorphous silicon germanium alloy PIN photodiode and a metal-insulator-semiconductor switch (MISS) device. The developed photoreceiver uses a PIN photodiode as the light absorption structure and light wavelength selector and the MISS device as an actuator to drive an electronic load. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6 V under an incident light power of P/sub in/=100 /spl mu/W, and has a rise time of 465 /spl mu/s with a load resistance of R=1 k/spl Omega/. The peak response wavelength of the PIN photodiode is at 905 nm, i.e., infrared light. Thus the high output current PIN/MISS photoreceiver is a good candidate for some specific applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.554788