Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP:Fe regrowth

Selective regrowth of semi-insulating Ga/sub 0.51/In/sub 0.49/P: Fe (resistivity /spl ap/1/spl times/10/sup 12/ /spl Omega/ cm) has been realized for the first time to fabricate entirely Al free buried heterostructure GaInP/GaInAsP/GaAs laser emitting at 905 mn. The fabrication procedure and the las...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-02, Vol.44 (2), p.339-340
Main Authors: Lourdudoss, S., Ovtchinnikov, A., Kjebon, O., Nilsson, S., Backbom, L., Klinga, T., Holz, R.
Format: Article
Language:English
Subjects:
Aluminum
Etching
Gallium arsenide
Gold
Indium phosphide
Iron
Laboratories
Laser modes
Pump lasers
Scanning electron microscopy
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Summary:Selective regrowth of semi-insulating Ga/sub 0.51/In/sub 0.49/P: Fe (resistivity /spl ap/1/spl times/10/sup 12/ /spl Omega/ cm) has been realized for the first time to fabricate entirely Al free buried heterostructure GaInP/GaInAsP/GaAs laser emitting at 905 mn. The fabrication procedure and the laser characteristics are presented,.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.557728