Scaled silicon MOSFETs: degradation of the total gate capacitance

We use a fully quantum-mechanical model to study the influence of image and exchange-correlation effects on the inversion layer and total gate capacitance in scaled Si MOSFETs. We show that, when the device is in weak and moderate inversion, the inclusion of image and many-body exchange-correlation...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-04, Vol.44 (4), p.584-587
Main Authors: Vasileska, D., Schroder, D.K., Ferry, D.K.
Format: Article
Language:English
Subjects:
Capacitance
Degradation
Density measurement
Doping
MOSFETs
Poisson equations
Potential energy
Quasi-doping
Silicon
Voltage
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Summary:We use a fully quantum-mechanical model to study the influence of image and exchange-correlation effects on the inversion layer and total gate capacitance in scaled Si MOSFETs. We show that, when the device is in weak and moderate inversion, the inclusion of image and many-body exchange-correlation effects increases both the inversion layer and total gate capacitances and shifts the N/sub s/=N/sub s/(VG) characteristics of the device toward lower gate voltages.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.563362