Miller's approximation in VLSI and power bipolar transistors with reach-through collectors

Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness between 0.025 and 1 /spl mu/m. The empirical parameter n in Miller's relationship is evaluated...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-12, Vol.44 (12), p.2305-2307
Main Authors: Kumar, M.J., Datta, K.
Format: Article
Language:English
Subjects:
Bipolar transistors
Circuits
EPROM
Impact ionization
MOSFETs
Numerical simulation
Parameter estimation
Thin film devices
Tin
Very large scale integration
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Summary:Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness between 0.025 and 1 /spl mu/m. The empirical parameter n in Miller's relationship is evaluated under nonlocal impact ionization conditions within the useful range of current gain which corresponds to 0.1>1-1/M>0.005. The validity of Miller's relationship is also examined for power bipolar transistors having reach-through collectors (W/sub epi//spl les/W/sub pt/) using local ionization model and design curves for the empirical parameter n are provided for different collector structures.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.644660