A MOS-controlled high-voltage thyristor with low switching losses

A high-voltage phase-controlled symmetrical thyristor with MOS control was developed called the QCT. The QCT consists of two thyristor parts integrated on the same wafer; one MOS-controlled thyristor (MCT) with low conducting losses and a parallel conventional phase-controlled thyristor (PCT) with l...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1998-04, Vol.45 (4), p.957-965
Main Authors: Hermansson, W., Breitholtz, B., Zdansky, L.C.G., Andersson, K., Heijkenskjold, L.F., Revsater, R., Sigurd, D.
Format: Article
Language:English
Subjects:
Charge carrier lifetime
Circuits
MOSFETs
Process design
Quantum cascade lasers
Semiconductor devices
Switching loss
Thyristors
Turning
Voltage
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Summary:A high-voltage phase-controlled symmetrical thyristor with MOS control was developed called the QCT. The QCT consists of two thyristor parts integrated on the same wafer; one MOS-controlled thyristor (MCT) with low conducting losses and a parallel conventional phase-controlled thyristor (PCT) with low switching losses. During the on-state both thyristor parts conduct the current. At commutation, the MCT-part is turned off, forcing the current over to the PCT. Thereby the QCT, even with high-voltage blocking capability, can have both low on-state losses and low switching losses, An experimental QCT for 5-10 kV has been designed and processed, having a diameter of 45 mm with a segmented MCT-part of 9-cm/sup 2/ area with high carrier lifetime to achieve low conduction losses and a 1.5-cm/sup 2/ PCT with low carrier lifetime to achieve low switching losses. The QCT has a conventional amplifying thyristor gate for turn-on and separate MOS-gates for turning off the MCT-part. The QCT was designed for a current handling capability of 400 A. It was shown that the reverse recovery charge could be reduced three to five times as compared to a device without this MOS-control.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.662811