A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 /spl mu/m channel lengths both at low and room temperatures.

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Bibliographic Details
Published in:IEEE transactions on electron devices 1998-10, Vol.45 (10), p.2249-2251
Main Authors: Roldan, J.B., Gamiz, F., Lopez-Villanueva, J.A., Cartujo, P., Carceller, J.E.
Format: Article
Language:English
Subjects:
Analytical models
Circuit simulation
Electric variables
Electrons
Fabrication
MOS devices
MOSFET circuits
Semiconductor device modeling
Temperature
Transconductance
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Description
Summary:We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 /spl mu/m channel lengths both at low and room temperatures.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.725262