A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 /spl mu/m channel lengths both at low and room temperatures.

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Published in:IEEE transactions on electron devices 1998-10, Vol.45 (10), p.2249-2251
Main Authors: Roldan, J.B., Gamiz, F., Lopez-Villanueva, J.A., Cartujo, P., Carceller, J.E.
Format: Article
Language:English
Subjects:
Analytical models
Circuit simulation
Electric variables
Electrons
Fabrication
MOS devices
MOSFET circuits
Semiconductor device modeling
Temperature
Transconductance
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cited_by cdi_FETCH-LOGICAL-c277t-a77b7e2fad6cc62ca43d38be64d89bd7563968e04e585eb2dde55bd0a7c5b57f3
cites cdi_FETCH-LOGICAL-c277t-a77b7e2fad6cc62ca43d38be64d89bd7563968e04e585eb2dde55bd0a7c5b57f3
container_end_page 2251
container_issue 10
container_start_page 2249
container_title IEEE transactions on electron devices
container_volume 45
creator Roldan, J.B.
Gamiz, F.
Lopez-Villanueva, J.A.
Cartujo, P.
Carceller, J.E.
description We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 /spl mu/m channel lengths both at low and room temperatures.
doi_str_mv 10.1109/16.725262
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_16_725262</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>725262</ieee_id><sourcerecordid>28369278</sourcerecordid><originalsourceid>FETCH-LOGICAL-c277t-a77b7e2fad6cc62ca43d38be64d89bd7563968e04e585eb2dde55bd0a7c5b57f3</originalsourceid><addsrcrecordid>eNo90M9LwzAUB_AgCs7pwaunnAQPnUna_OhxDKfCZAf1XNLk1UXaZibpYP-9lQ5Pj8f7vAfvi9AtJQtKSflIxUIyzgQ7QzPKucxKUYhzNCOEqqzMVX6JrmL8HltRFGyG9BJ33kKLGx9w2gG2QbsemyEE6BP2DbYAexyHunMm-A4SBPy2fV8_fUTsetMO1vVfGFowKfg-O0DrjUtH7A8Q4s77dI0uGt1GuDnVOfocl1cv2Wb7_LpabjLDpEyZlrKWwBpthTGCGV3kNlc1iMKqsraSi7wUCkgBXHGombXAeW2JlobXXDb5HN1Pd_fB_wwQU9W5aKBtdQ9-iBVTuSiZVCN8mOD4T4wBmmofXKfDsaKk-guxoqKaQhzt3WQdAPy70_AXBYFuNg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28369278</pqid></control><display><type>article</type><title>A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Roldan, J.B. ; Gamiz, F. ; Lopez-Villanueva, J.A. ; Cartujo, P. ; Carceller, J.E.</creator><creatorcontrib>Roldan, J.B. ; Gamiz, F. ; Lopez-Villanueva, J.A. ; Cartujo, P. ; Carceller, J.E.</creatorcontrib><description>We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 /spl mu/m channel lengths both at low and room temperatures.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.725262</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Circuit simulation ; Electric variables ; Electrons ; Fabrication ; MOS devices ; MOSFET circuits ; Semiconductor device modeling ; Temperature ; Transconductance</subject><ispartof>IEEE transactions on electron devices, 1998-10, Vol.45 (10), p.2249-2251</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c277t-a77b7e2fad6cc62ca43d38be64d89bd7563968e04e585eb2dde55bd0a7c5b57f3</citedby><cites>FETCH-LOGICAL-c277t-a77b7e2fad6cc62ca43d38be64d89bd7563968e04e585eb2dde55bd0a7c5b57f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/725262$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,54794</link.rule.ids></links><search><creatorcontrib>Roldan, J.B.</creatorcontrib><creatorcontrib>Gamiz, F.</creatorcontrib><creatorcontrib>Lopez-Villanueva, J.A.</creatorcontrib><creatorcontrib>Cartujo, P.</creatorcontrib><creatorcontrib>Carceller, J.E.</creatorcontrib><title>A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 /spl mu/m channel lengths both at low and room temperatures.</description><subject>Analytical models</subject><subject>Circuit simulation</subject><subject>Electric variables</subject><subject>Electrons</subject><subject>Fabrication</subject><subject>MOS devices</subject><subject>MOSFET circuits</subject><subject>Semiconductor device modeling</subject><subject>Temperature</subject><subject>Transconductance</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNo90M9LwzAUB_AgCs7pwaunnAQPnUna_OhxDKfCZAf1XNLk1UXaZibpYP-9lQ5Pj8f7vAfvi9AtJQtKSflIxUIyzgQ7QzPKucxKUYhzNCOEqqzMVX6JrmL8HltRFGyG9BJ33kKLGx9w2gG2QbsemyEE6BP2DbYAexyHunMm-A4SBPy2fV8_fUTsetMO1vVfGFowKfg-O0DrjUtH7A8Q4s77dI0uGt1GuDnVOfocl1cv2Wb7_LpabjLDpEyZlrKWwBpthTGCGV3kNlc1iMKqsraSi7wUCkgBXHGombXAeW2JlobXXDb5HN1Pd_fB_wwQU9W5aKBtdQ9-iBVTuSiZVCN8mOD4T4wBmmofXKfDsaKk-guxoqKaQhzt3WQdAPy70_AXBYFuNg</recordid><startdate>19981001</startdate><enddate>19981001</enddate><creator>Roldan, J.B.</creator><creator>Gamiz, F.</creator><creator>Lopez-Villanueva, J.A.</creator><creator>Cartujo, P.</creator><creator>Carceller, J.E.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19981001</creationdate><title>A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot</title><author>Roldan, J.B. ; Gamiz, F. ; Lopez-Villanueva, J.A. ; Cartujo, P. ; Carceller, J.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c277t-a77b7e2fad6cc62ca43d38be64d89bd7563968e04e585eb2dde55bd0a7c5b57f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Analytical models</topic><topic>Circuit simulation</topic><topic>Electric variables</topic><topic>Electrons</topic><topic>Fabrication</topic><topic>MOS devices</topic><topic>MOSFET circuits</topic><topic>Semiconductor device modeling</topic><topic>Temperature</topic><topic>Transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Roldan, J.B.</creatorcontrib><creatorcontrib>Gamiz, F.</creatorcontrib><creatorcontrib>Lopez-Villanueva, J.A.</creatorcontrib><creatorcontrib>Cartujo, P.</creatorcontrib><creatorcontrib>Carceller, J.E.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Roldan, J.B.</au><au>Gamiz, F.</au><au>Lopez-Villanueva, J.A.</au><au>Cartujo, P.</au><au>Carceller, J.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1998-10-01</date><risdate>1998</risdate><volume>45</volume><issue>10</issue><spage>2249</spage><epage>2251</epage><pages>2249-2251</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 /spl mu/m channel lengths both at low and room temperatures.</abstract><pub>IEEE</pub><doi>10.1109/16.725262</doi><tpages>3</tpages></addata></record>
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source IEEE Electronic Library (IEL) Journals
subjects Analytical models
Circuit simulation
Electric variables
Electrons
Fabrication
MOS devices
MOSFET circuits
Semiconductor device modeling
Temperature
Transconductance
title A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T16%3A40%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20model%20for%20the%20drain%20current%20of%20deep%20submicrometer%20MOSFETs%20including%20electron-velocity%20overshoot&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Roldan,%20J.B.&rft.date=1998-10-01&rft.volume=45&rft.issue=10&rft.spage=2249&rft.epage=2251&rft.pages=2249-2251&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.725262&rft_dat=%3Cproquest_cross%3E28369278%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c277t-a77b7e2fad6cc62ca43d38be64d89bd7563968e04e585eb2dde55bd0a7c5b57f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28369278&rft_id=info:pmid/&rft_ieee_id=725262&rfr_iscdi=true