A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1999-07, Vol.46 (7), p.1525-1531
Main Authors: Jouan, S., Planche, R., Baudry, H., Ribot, P., Chroboczek, J.A., Dutartre, D., Gloria, D., Laurens, M., Llinares, P., Marty, M., Monroy, A., Morin, C., Pantel, R., Perrotin, A., de Pontcharro, J., Regolini, J.L., Vincent, G., Chantre, A.
Format: Article
Language:English
Subjects:
Devices
Emitters
Epitaxy
Germanium alloys
Heterojunction bipolar transistors
High speed
Manufacturability
Noise
Silicon germanides
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Description
Summary:A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.772506