Use of silicon bipolar transistors as sensors for neutron energy spectra determinations

Recent reevaluation of the neutron displacement damage function for silicon qualifies it as a sensor for spectra determinations. This development is especially useful in the critical energy region from 0.2 to 2.0 MeV where, in the absence of fission foils, there is a shortage of response functions n...

Full description

Saved in:
Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1180-1186
Main Authors: Kelly, J.G., Griffin, P.J., Luera, T.F.
Format: Article
Language:English
Subjects:
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
Applied sciences
Bipolar transistors
Electronic equipment testing
Electronics
ELEMENTS
Energy measurement
ENERGY RANGE
ENGINEERING
Exact sciences and technology
FUNCTIONS
Gamma ray detectors
Gamma rays
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Integral equations
Isotopes
KEV RANGE
KEV RANGE 100-1000
Laboratories
MEASURING INSTRUMENTS
MEV RANGE
MEV RANGE 01-10
NEUTRON SPECTRA
Neutrons
RADIATION DETECTORS
RADIATION EFFECTS
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMIMETALS
SILICON
SPECTRA
TRANSISTORS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Recent reevaluation of the neutron displacement damage function for silicon qualifies it as a sensor for spectra determinations. This development is especially useful in the critical energy region from 0.2 to 2.0 MeV where, in the absence of fission foils, there is a shortage of response functions needed to define spectra satisfactorily. How silicon bipolar devices can be used to improve neutron spectra determinations and therefore to better predict the displacement damage induced in devices is described.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.124091