Total dose characterization of a CMOS technology at high dose rates and temperatures

Radiation-hardened MOS ICs and transistors were irradiated using several high-dose-rate sources. A strong dependence of the dose-to-failure level is observed for different circuit designs, the dose per pulse, package temperature, and the average dose rate of the radiation source at ambient and eleva...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 1988-12, Vol.35 (6), p.1557-1562
Main Authors: Browning, J.S., Connors, M.P., Freshman, C.L., Finney, G.A.
Format: Article
Language:English
Subjects:
Annealing
Circuit synthesis
CMOS integrated circuits
CMOS technology
Ionizing radiation
Laboratories
Linear particle accelerator
Temperature
Threshold voltage
Voltage measurement
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c336t-9e311362a34cfcc44e420eaafc9d44b60ddfbb94b8f14d914b29cb090d48a39f3
cites cdi_FETCH-LOGICAL-c336t-9e311362a34cfcc44e420eaafc9d44b60ddfbb94b8f14d914b29cb090d48a39f3
container_end_page 1562
container_issue 6
container_start_page 1557
container_title IEEE transactions on nuclear science
container_volume 35
creator Browning, J.S.
Connors, M.P.
Freshman, C.L.
Finney, G.A.
description Radiation-hardened MOS ICs and transistors were irradiated using several high-dose-rate sources. A strong dependence of the dose-to-failure level is observed for different circuit designs, the dose per pulse, package temperature, and the average dose rate of the radiation source at ambient and elevated temperatures. The results indicate that extrapolating very high dose rate IC and transistor properties from Co-60 or X-ray source data could be extremely difficult and poses a serious problem for any hardness assurance program. For extrapolating to strategic applications, and intimate knowledge of the circuit design and performance and a knowledge of the transistor performance in the environment of interest are necessary.< >
doi_str_mv 10.1109/23.25497
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_23_25497</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>25497</ieee_id><sourcerecordid>25099312</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-9e311362a34cfcc44e420eaafc9d44b60ddfbb94b8f14d914b29cb090d48a39f3</originalsourceid><addsrcrecordid>eNqN0T1PwzAQBmALgUQpSKxsnhBLij9Te0QVXxKoA2W2HOfcBKVxsd2h_HoCQawwnV7dc7e8CJ1TMqOU6GvGZ0wKPT9AEyqlKqicq0M0IYSqQgutj9FJSm9DFJLICVqtQrYdrkMC7BobrcsQ2w-b29Dj4LHFi-flC87gmj50Yb3HNuOmXTfjSbQZErZ9PYjNFoa4i5BO0ZG3XYKznzlFr3e3q8VD8bS8f1zcPBWO8zIXGjilvGSWC-edEwIEI2Ctd7oWoipJXfuq0qJSnopaU1Ex7SqiSS2U5drzKboc_25jeN9BymbTJgddZ3sIu2SYUnLOZfkPWJaMCfU3lERrTtkAr0boYkgpgjfb2G5s3BtKzFcRhnHzXcRAL0baAsAvG3efZwiCwA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25099312</pqid></control><display><type>article</type><title>Total dose characterization of a CMOS technology at high dose rates and temperatures</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Browning, J.S. ; Connors, M.P. ; Freshman, C.L. ; Finney, G.A.</creator><creatorcontrib>Browning, J.S. ; Connors, M.P. ; Freshman, C.L. ; Finney, G.A.</creatorcontrib><description>Radiation-hardened MOS ICs and transistors were irradiated using several high-dose-rate sources. A strong dependence of the dose-to-failure level is observed for different circuit designs, the dose per pulse, package temperature, and the average dose rate of the radiation source at ambient and elevated temperatures. The results indicate that extrapolating very high dose rate IC and transistor properties from Co-60 or X-ray source data could be extremely difficult and poses a serious problem for any hardness assurance program. For extrapolating to strategic applications, and intimate knowledge of the circuit design and performance and a knowledge of the transistor performance in the environment of interest are necessary.&lt; &gt;</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.25497</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Circuit synthesis ; CMOS integrated circuits ; CMOS technology ; Ionizing radiation ; Laboratories ; Linear particle accelerator ; Temperature ; Threshold voltage ; Voltage measurement</subject><ispartof>IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1557-1562</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-9e311362a34cfcc44e420eaafc9d44b60ddfbb94b8f14d914b29cb090d48a39f3</citedby><cites>FETCH-LOGICAL-c336t-9e311362a34cfcc44e420eaafc9d44b60ddfbb94b8f14d914b29cb090d48a39f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/25497$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Browning, J.S.</creatorcontrib><creatorcontrib>Connors, M.P.</creatorcontrib><creatorcontrib>Freshman, C.L.</creatorcontrib><creatorcontrib>Finney, G.A.</creatorcontrib><title>Total dose characterization of a CMOS technology at high dose rates and temperatures</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Radiation-hardened MOS ICs and transistors were irradiated using several high-dose-rate sources. A strong dependence of the dose-to-failure level is observed for different circuit designs, the dose per pulse, package temperature, and the average dose rate of the radiation source at ambient and elevated temperatures. The results indicate that extrapolating very high dose rate IC and transistor properties from Co-60 or X-ray source data could be extremely difficult and poses a serious problem for any hardness assurance program. For extrapolating to strategic applications, and intimate knowledge of the circuit design and performance and a knowledge of the transistor performance in the environment of interest are necessary.&lt; &gt;</description><subject>Annealing</subject><subject>Circuit synthesis</subject><subject>CMOS integrated circuits</subject><subject>CMOS technology</subject><subject>Ionizing radiation</subject><subject>Laboratories</subject><subject>Linear particle accelerator</subject><subject>Temperature</subject><subject>Threshold voltage</subject><subject>Voltage measurement</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqN0T1PwzAQBmALgUQpSKxsnhBLij9Te0QVXxKoA2W2HOfcBKVxsd2h_HoCQawwnV7dc7e8CJ1TMqOU6GvGZ0wKPT9AEyqlKqicq0M0IYSqQgutj9FJSm9DFJLICVqtQrYdrkMC7BobrcsQ2w-b29Dj4LHFi-flC87gmj50Yb3HNuOmXTfjSbQZErZ9PYjNFoa4i5BO0ZG3XYKznzlFr3e3q8VD8bS8f1zcPBWO8zIXGjilvGSWC-edEwIEI2Ctd7oWoipJXfuq0qJSnopaU1Ex7SqiSS2U5drzKboc_25jeN9BymbTJgddZ3sIu2SYUnLOZfkPWJaMCfU3lERrTtkAr0boYkgpgjfb2G5s3BtKzFcRhnHzXcRAL0baAsAvG3efZwiCwA</recordid><startdate>19881201</startdate><enddate>19881201</enddate><creator>Browning, J.S.</creator><creator>Connors, M.P.</creator><creator>Freshman, C.L.</creator><creator>Finney, G.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19881201</creationdate><title>Total dose characterization of a CMOS technology at high dose rates and temperatures</title><author>Browning, J.S. ; Connors, M.P. ; Freshman, C.L. ; Finney, G.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-9e311362a34cfcc44e420eaafc9d44b60ddfbb94b8f14d914b29cb090d48a39f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Annealing</topic><topic>Circuit synthesis</topic><topic>CMOS integrated circuits</topic><topic>CMOS technology</topic><topic>Ionizing radiation</topic><topic>Laboratories</topic><topic>Linear particle accelerator</topic><topic>Temperature</topic><topic>Threshold voltage</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Browning, J.S.</creatorcontrib><creatorcontrib>Connors, M.P.</creatorcontrib><creatorcontrib>Freshman, C.L.</creatorcontrib><creatorcontrib>Finney, G.A.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Browning, J.S.</au><au>Connors, M.P.</au><au>Freshman, C.L.</au><au>Finney, G.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Total dose characterization of a CMOS technology at high dose rates and temperatures</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1988-12-01</date><risdate>1988</risdate><volume>35</volume><issue>6</issue><spage>1557</spage><epage>1562</epage><pages>1557-1562</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Radiation-hardened MOS ICs and transistors were irradiated using several high-dose-rate sources. A strong dependence of the dose-to-failure level is observed for different circuit designs, the dose per pulse, package temperature, and the average dose rate of the radiation source at ambient and elevated temperatures. The results indicate that extrapolating very high dose rate IC and transistor properties from Co-60 or X-ray source data could be extremely difficult and poses a serious problem for any hardness assurance program. For extrapolating to strategic applications, and intimate knowledge of the circuit design and performance and a knowledge of the transistor performance in the environment of interest are necessary.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/23.25497</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9499
ispartof IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1557-1562
issn 0018-9499
1558-1578
language eng
recordid cdi_crossref_primary_10_1109_23_25497
source IEEE Electronic Library (IEL) Journals
subjects Annealing
Circuit synthesis
CMOS integrated circuits
CMOS technology
Ionizing radiation
Laboratories
Linear particle accelerator
Temperature
Threshold voltage
Voltage measurement
title Total dose characterization of a CMOS technology at high dose rates and temperatures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T18%3A02%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Total%20dose%20characterization%20of%20a%20CMOS%20technology%20at%20high%20dose%20rates%20and%20temperatures&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Browning,%20J.S.&rft.date=1988-12-01&rft.volume=35&rft.issue=6&rft.spage=1557&rft.epage=1562&rft.pages=1557-1562&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/23.25497&rft_dat=%3Cproquest_cross%3E25099312%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c336t-9e311362a34cfcc44e420eaafc9d44b60ddfbb94b8f14d914b29cb090d48a39f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=25099312&rft_id=info:pmid/&rft_ieee_id=25497&rfr_iscdi=true