A systematic study of the initial electrical and radiation hardness properties of reoxidized nitrided oxides by rapid thermal processing

The initial electrical and radiation hardness properties of MOS capacitors with reoxidized nitrided oxides (RNO) structures are systematically investigated by changing the pressure, temperature, and times of nitridation and reoxidation in rapid thermal processes. It was found that the initial flat-b...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1995-06, Vol.42 (3), p.167-173
Main Authors: Lu, Wei-Shin, Chan, Ching-Hsu, Hwu, Jenn-Gwo
Format: Article
Language:English
Subjects:
Applied sciences
Electric properties
Electronics
Evaporation
Exact sciences and technology
Hardness
Hydrogen
Insulation
MOS capacitors
MOS devices
Nitriding
Oxygen
Passivation
Pressure effects
Radiation effects
Rapid thermal processing
Resistance
Silicon compounds
Temperature
Testing, measurement, noise and reliability
Thermal effects
Thermal stresses
Virtual manufacturing
Voltage
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Summary:The initial electrical and radiation hardness properties of MOS capacitors with reoxidized nitrided oxides (RNO) structures are systematically investigated by changing the pressure, temperature, and times of nitridation and reoxidation in rapid thermal processes. It was found that the initial flat-band voltage (V/sub fb/) and midgap interface trap density (D/sub itm/) are strongly dependent on the growth conditions and show concave or convex "turnaround" dependency on some process parameters. This may be explained by the hydrogen evaporation and oxygen passivation mechanisms. The radiation induced flat-band voltage shift (/spl Delta/V/sub fb/) and midgap interface trap density shift (/spl Delta/D/sub itm/) are also growth-condition dependent and show different "turnaround" dependencies on some process parameters from those observed in initial properties. This may be explained by the variations of the amount of hydrogen-related species such as Si-NH, Si-H, or Si-OH, and nitrogen-related species, such as Si-N, in the oxide bulk and at the Si/SiO/sub 2/ interface. Finally, the sample with a reoxidation pressure of 250 torr, a reoxidation temperature of 1050/spl deg/C, and a reoxidation time of 100 s is suggested to be the most radiation-hard together with good initial properties for RNO devices.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.387357