High-energy heavy-ion-induced charge transport across multiple junctions

High-energy heavy ion experiments and numerical simulations show that two or more junctions bridged by an ion track respond in a coupled manner. The potential difference across the structure strongly affects the amount of charge collected at each of the junctions. Experiments with 1.7 GeV /sup 197/A...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1995-12, Vol.42 (6), p.1780-1788
Main Authors: Dussault, H., Howard, J.W., Block, R.C., Stapor, W.J., Knudson, A.R., McDonald, P.T., Pinto, M.R.
Format: Article
Language:English
Subjects:
Bipolar transistors
Circuit simulation
Integrated circuit modeling
Microelectronics
Numerical simulation
Semiconductor device doping
Silicon
Solid modeling
Substrates
Testing
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Summary:High-energy heavy ion experiments and numerical simulations show that two or more junctions bridged by an ion track respond in a coupled manner. The potential difference across the structure strongly affects the amount of charge collected at each of the junctions. Experiments with 1.7 GeV /sup 197/Au ions indicate that, for emitter biases less than or equal to 0.0 volts and potential differences of 5 or more volts, more charge may be collected at a junction than was initially deposited by the ion. Simulations show that, when an ion track intersects multiple junctions of a device, the responses of the individual junctions cannot be modeled independently of each other. Simulation and experimental results indicate that charge transport in a multiple junction structure cannot be modeled using simple geometry or funneling assumptions.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.488779