Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1995-12, Vol.42 (6), p.1815-1822
Main Authors: Normand, E., Oberg, D.L., Wert, J.L., Majewski, P.P., Woffinden, G.A., Satoh, S., Sasaki, K., Tverskoy, M.G., Miroshkin, V.V., Goleminov, N., Wender, S.A., Gavron, A.
Format: Article
Language:English
Subjects:
Charge measurement
Current measurement
Energy measurement
Indium gallium arsenide
Laboratories
Neutrons
Photodiodes
Protons
Silicon
Testing
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Description
Summary:A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.488784