Radiation induced charge in SIMOX buried oxides: lack of thickness dependence at low applied fields

Commercially prepared Separation-by-IMplantation-of-OXygen (SIMOX) wafers having buried-oxide (BOX) thicknesses ranging from 80 to 400 nm, and thermal oxides of similar thicknesses, were exposed to various doses of 10 keV X-rays. The net positive charge trapped in the buried-oxides during the radiat...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 1997-12, Vol.44 (6), p.2095-2100
Main Authors: Lawrence, R.K., Mrstik, B.J., Hughes, H.L., McMarr, P.J.
Format: Article
Language:English
Subjects:
Annealing
Capacitance-voltage characteristics
Charge measurement
Current measurement
Electron traps
Implants
Permittivity measurement
Temperature
Voltage
X-rays
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Commercially prepared Separation-by-IMplantation-of-OXygen (SIMOX) wafers having buried-oxide (BOX) thicknesses ranging from 80 to 400 nm, and thermal oxides of similar thicknesses, were exposed to various doses of 10 keV X-rays. The net positive charge trapped in the buried-oxides during the radiation was determined by dual capacitance-voltage (C-V) and point-contact current voltage (I-V) measurements. For the thermal oxides, using metal-oxide-semiconductor (MOS) CV techniques, the amount of trapped charge was found to have the expected linear dependence on oxide thickness. For the SIMOX buried oxides, however, the amount of net trapped charge was found to be independent of BOX thickness when the oxides were biased at 0.05 MV/cm (a typical operating field). The SIMOX results are explained in terms of bulk-oxide hole and electron trapping.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.659023