Single-event upset in flash memories

Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1997-12, Vol.44 (6), p.2315-2324
Main Authors: Schwartz, H.R., Nichols, D.K., Johnston, A.H.
Format: Article
Language:English
Subjects:
Charge pumps
Circuits
Flash memory
Laboratories
Nonvolatile memory
Propulsion
Random access memory
Space technology
Voltage
Writing
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Summary:Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even when devices were irradiated in a read mode with the internal charge pump inactive. For one device technology, unusually high currents were observed during post-irradiation cycling that were high enough to cause catastrophic failure.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.659053