Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

• Published in: IEEE transactions on nuclear science 1998-12, Vol.45 (6), p.2842-2848
• Main Authors: Marshall, C.J., Marshall, P.W., Carts, M.A., Reed, R.A., LaBel, K.A.
• Format: Article
• Language: English
• Subjects: Detectors; Gallium arsenide; Indium gallium arsenide; Ionization; Optical receivers; Optical sensors; P-i-n diodes; Photodetectors; Protons; Robustness
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.736537

We present a study of proton transient effects in metal-semiconductor-metal (MSM) photodetectors, which demonstrates their inherent advantage for minimizing Single Event Effects (SEEs) in proton environments. Upset mechanisms are characterized for 830 nm GaAs and 1300 nm InGaAs detectors. Only protons incident at grazing angles are likely to cause bit errors by direct ionization. The MSM technology appears to be a more robust to single bit errors than thicker 1300 nm p-i-n diode structures which we have previously shown to be susceptible to errors from direct ionization events at all angles, and also at relatively high optical powers. For a given receiver, the relative contributions of direct ionization and nuclear reaction upset mechanisms at a specific data rate and optical power are determined by the geometry of the charge collection volume of the detector. We show that state-of-the-art p-i-n detectors can also display a reduced sensitivity to direct ionization by incident protons except at grazing angles.