SEU induced by pions in memories from different generations

This paper presents single-event upset cross-sections obtained with pions for a set of SRAMs/DRAMs from different generations. The experimental results show that pions are not more efficient than protons in creating upsets. Predictions using the two-parameters model are presented and discussed.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.1960-1965
Main Authors: Duzellier, S., Falguere, D., Tverskoy, M., Ivanov, E., Dufayel, R., Calvet, M.-C.
Format: Article
Language:English
Subjects:
Aerospace electronics
Aircraft
Cross sections
Mathematical models
Mesons
Neutrons
Particle beams
Pions
Pollution measurement
Protons
Random access memory
Single event upset
Testing
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Description
Summary:This paper presents single-event upset cross-sections obtained with pions for a set of SRAMs/DRAMs from different generations. The experimental results show that pions are not more efficient than protons in creating upsets. Predictions using the two-parameters model are presented and discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983157