FGMOS dosimetry: design and implementation

We present results from a radiation dosimeter based on the erasure of floating-gate MOS transistors. Background theory and analysis necessary to describe the operation of the sensor are presented.

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.2050-2055
Main Authors: Martin, M.N., Roth, D.R., Garrison-Darrin, A., McNulty, P.J., Andreou, A.G.
Format: Article
Language:English
Subjects:
Charge carrier processes
Circuit synthesis
Design engineering
Dosimeters
Dosimetry
Electrons
Ionizing radiation sensors
Metal oxide semiconductors
MOSFET circuits
Physics
Radiation effects
Semiconductor devices
Sensor phenomena and characterization
Sensors
Transistors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present results from a radiation dosimeter based on the erasure of floating-gate MOS transistors. Background theory and analysis necessary to describe the operation of the sensor are presented.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983171