Loading…

Multichip assembly with flipped integrated circuits

A multichip module process has been developed using flipped-chip interconnection. The process uses plated copper bumps for superior thermal transport characteristics, active silicon as a substrate material for matched expansion properties, on-chip interconnection metallization that allows bumps to b...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on components, hybrids, and manufacturing technology hybrids, and manufacturing technology, 1989-12, Vol.12 (4), p.650-657
Main Authors: Heinen, K.G., Schroen, W.H., Edwards, D.R., Wilson, A.M., Stierman, R.J., Lamson, M.A.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A multichip module process has been developed using flipped-chip interconnection. The process uses plated copper bumps for superior thermal transport characteristics, active silicon as a substrate material for matched expansion properties, on-chip interconnection metallization that allows bumps to be placed over the active circuitry, and conventional wafer fabrication facilities for low-cost production. For successful design and fabrication of multichip assemblies, an organized methodology similar to that which has proved successful in design and assembly of single VLSI circuits was used. This approach involves: computer-aided modeling of the circuit and package for electrical, thermal, and mechanical simulation; test chips for process development and failure mechanism testing; and fabrication of actual demonstration circuits. Verification of function and reliability was then made through temperature cycle testing (-65 degrees C to 150 degrees C), exposure to accelerated moisture environments, and measure of heat dissipation properties. This approach and an example of its application to a multichip module that demonstrated successful performance on the first design pass are described.< >
ISSN:0148-6411
1558-3082
DOI:10.1109/33.49029