InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

The fabrication and basic characteristics of a InGaAs/InGaAsP multi-quantum-well (MQW) electroabsorption modulator with a novel structure integrated with a distributed-feedback (DFB) laser are presented. A fundamental study was performed on the applicability of the InGaAs/InGaAsP MQW structure to an...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1993-06, Vol.29 (6), p.2088-2096
Main Authors: Aoki, M., Suzuki, M., Sano, H., Kawano, T., Ido, T., Taniwatari, T., Uomi, K., Takai, A.
Format: Article
Language:English
Subjects:
Applied sciences
Chemical lasers
Chemical vapor deposition
Chirp modulation
Circuit properties
Controllability
Design and performance testing of integrated-optical systems
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Indium gallium arsenide
Integrated optics. Optical fibers and wave guides
MOCVD
Optical and optoelectronic circuits
Optical attenuators
Optical device fabrication
Optical elements, devices, and systems
Optical processors, correlators, and modulators
Optics
Photonic band gap
Physics
Quantum well devices
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Summary:The fabrication and basic characteristics of a InGaAs/InGaAsP multi-quantum-well (MQW) electroabsorption modulator with a novel structure integrated with a distributed-feedback (DFB) laser are presented. A fundamental study was performed on the applicability of the InGaAs/InGaAsP MQW structure to an electroabsorption-type modulator. Efficient attenuation small hole pileup and small chirp characteristics of a discrete modulator based on this MQW structure were demonstrated experimentally. A study of the controllability of in-plane band-gap energy by the use of selective-area metal-organic chemical vapor deposition (MOCVD) was also demonstrated. The modulator was monolithically integrated with a MQW DFB laser of the same material. Using a low-capacitance semi-insulating buried heterostructure, over 14 GHz modulation under high-light-output operations up to +10 dBm was achieved. Modulation at 10 Gb/s with a modulation voltage swing of only 1 V/sub pp/ demonstrates the potential value of this system for 1.55- mu m lightwave communications.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.234473