Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1996-08, Vol.32 (8), p.1478-1486
Main Authors: SEKI, S, OOHASHI, H, SUGIURA, H, HIRONO, T, YOKOYAMA, K
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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ISSN:0018-9197
1558-1713
DOI:10.1109/3.511561