Low-noise 650-nm-band AlGaInP visible laser diodes with a highly doped saturable absorbing layer

Stable self-sustained pulsating and low-noise 650-nm-band AlGaInP visible laser diodes were demonstrated by adopting a novel structure, which has a highly doped saturable absorbing (SA) layer. Short carrier lifetime, which is indispensable for self-pulsation, was realized by applying high doping con...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of quantum electronics 1997-05, Vol.33 (5), p.831-837
Main Authors: Kidoguchi, I., Adachi, H., Kamiyama, S., Fukuhisa, T., Mannoh, M., Takamori, A.
Format: Article
Language:English
Subjects:
Charge carrier lifetime
Diode lasers
Doping
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optical noise
Optical refraction
Optics
Physics
Power generation
Power measurement
Refractive index
Semiconductor lasers
laser diodes
Temperature distribution
Threshold current
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Stable self-sustained pulsating and low-noise 650-nm-band AlGaInP visible laser diodes were demonstrated by adopting a novel structure, which has a highly doped saturable absorbing (SA) layer. Short carrier lifetime, which is indispensable for self-pulsation, was realized by applying high doping concentration to the p-type SA layer. 500-/spl mu/m-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 75 mA at 20/spl deg/C. The temporal output power was measured at the average output power of 5 mW and the stable self-pulsation was observed up to an ambient temperature of 60/spl deg/C. Therefore, the relative intensity noise (RIN) was kept about -140 dB/Hz in temperature ranging from 20/spl deg/C to 60/spl deg/C. Since the refractive index difference could be kept large and the optical mode could be confined effectively, the astigmatism in this work was below 3 /spl mu/m at 5 mW against dc injection current. The lasers operated over 1350 h under the average output power of 5 mW at 60/spl deg/C.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.572158