Low-noise 650-nm-band AlGaInP visible laser diodes with a highly doped saturable absorbing layer

• Published in: IEEE journal of quantum electronics 1997-05, Vol.33 (5), p.831-837
• Main Authors: Kidoguchi, I., Adachi, H., Kamiyama, S., Fukuhisa, T., Mannoh, M., Takamori, A.
• Format: Article
• Language: English
• Subjects: Charge carrier lifetime; Diode lasers; Doping; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Optical noise; Optical refraction; Optics; Physics; Power generation; Power measurement; Refractive index; Semiconductor lasers; laser diodes; Temperature distribution; Threshold current
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.572158

Stable self-sustained pulsating and low-noise 650-nm-band AlGaInP visible laser diodes were demonstrated by adopting a novel structure, which has a highly doped saturable absorbing (SA) layer. Short carrier lifetime, which is indispensable for self-pulsation, was realized by applying high doping concentration to the p-type SA layer. 500-/spl mu/m-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 75 mA at 20/spl deg/C. The temporal output power was measured at the average output power of 5 mW and the stable self-pulsation was observed up to an ambient temperature of 60/spl deg/C. Therefore, the relative intensity noise (RIN) was kept about -140 dB/Hz in temperature ranging from 20/spl deg/C to 60/spl deg/C. Since the refractive index difference could be kept large and the optical mode could be confined effectively, the astigmatism in this work was below 3 /spl mu/m at 5 mW against dc injection current. The lasers operated over 1350 h under the average output power of 5 mW at 60/spl deg/C.