High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1997-12, Vol.33 (12), p.2266-2276
Main Authors: GOKHALE, M. R, DRIES, J. C, STUDENKOV, P. V, FORREST, S. R, GARBUZOV, D. Z
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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ISSN:0018-9197
1558-1713
DOI:10.1109/3.644109