Temperature dependence of the threshold current for InGaAlP visible laser diodes

The temperature dependence of the threshold current for InGaAlP visible-light laser diodes was investigated from the standpoint of gain-current characteristics. The dependence of the light output power versus the current characteristic on the cavity length was evaluated for a 40- mu m-wide InGaP-InG...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1991-01, Vol.27 (1), p.23-29
Main Authors: Ishikawa, M., Shiozawa, H., Itaya, K., Hatakoshi, G.-I., Uematsu, Y.
Format: Article
Language:English
Subjects:
426002 - Engineering- Lasers & Masers- (1990-)
ALUMINIUM COMPOUNDS
AMPLIFICATION
CURRENTS
DIMENSIONS
Diode lasers
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ENERGY
ENGINEERING
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
GAIN
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASER CAVITIES
Laser theory
LASERS
LENGTH
LOW TEMPERATURE
MATERIALS
MEDIUM TEMPERATURE
ONE-DIMENSIONAL CALCULATIONS
Optical losses
Optical materials
Optics
P-TYPE CONDUCTORS
PHOSPHORUS COMPOUNDS
Photonic band gap
Physics
Power generation
Power lasers
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
TEMPERATURE DEPENDENCE
Temperature distribution
Threshold current
THRESHOLD ENERGY
VISIBLE RADIATION
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Summary:The temperature dependence of the threshold current for InGaAlP visible-light laser diodes was investigated from the standpoint of gain-current characteristics. The dependence of the light output power versus the current characteristic on the cavity length was evaluated for a 40- mu m-wide InGaP-InGaAlP broad-stripe laser in the temperature range between -70 and 90 degrees C. The threshold-current density dependence on the cavity length shows that a linear-gain approximation is suitable for this system. A minimum threshold-current density of 860 A/cm/sup 2/ was achieved at room temperature with a cavity length of 1160 mu m. The internal quantum efficiency decreased in the temperature range higher than -10 degrees C, which affected the excess threshold-current increase and the decrease in the characteristic temperature at this temperature range.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.73537