On the capacitance-voltage modeling of strained quantum-well MODFETs

A theoretical model for the capacitance-voltage characteristics of strained modulation-doped field-effect transistors (MODFETs) is developed, based on a self-consistent solution of the Schrodinger and Poisson equations. We report on the first MODFET C-V simulator in which the proposed Hamiltonian ta...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of quantum electronics 1998-12, Vol.34 (12), p.2314-2320
Main Authors: Manzoli, J.E., Romero, M.A., Hipolito, O.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance-voltage characteristics
Capacitive sensors
Electronics
Electrons
Epitaxial layers
Exact sciences and technology
FETs
HEMTs
Lattices
MODFETs
Poisson equations
Quantum wells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A theoretical model for the capacitance-voltage characteristics of strained modulation-doped field-effect transistors (MODFETs) is developed, based on a self-consistent solution of the Schrodinger and Poisson equations. We report on the first MODFET C-V simulator in which the proposed Hamiltonian takes into account the strain caused by lattice mismatch, as well as the position-dependent lattice constant and electron effective mass. It is demonstrated that the inclusion of strain-related energy terms is essential to achieve good agreement between theory and experimental data for the C-V characteristics of pseudomorphic-channel devices at high gate voltages. The model is also shown to be a useful tool to predict important device characteristics such as the transconductance.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.736099