32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array

We report the fabrication and performance of a 32/spl times/32 Al/sub 0.1/Ga/sub 0.9/N-GaN ultraviolet p-i-n photodetector array. The devices exhibit very low dark current, the mean dark current density is /spl sim/4 nA/cm/sup 2/ at 5-V reverse bias, and the dark current distribution is very uniform...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2000-11, Vol.36 (11), p.1229-1231
Main Authors: Yang, B., Heng, K., Li, T., Collins, C.J., Wang, S., Dupuis, R.D., Campbell, J.C., Schurman, M.J., Ferguson, I.T.
Format: Article
Language:English
Subjects:
Avalanche photodiodes
Contracts
Dark current
Gallium nitride
Gold
Missiles
Photodetectors
PIN photodiodes
Rapid thermal annealing
Solid state circuits
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Summary:We report the fabrication and performance of a 32/spl times/32 Al/sub 0.1/Ga/sub 0.9/N-GaN ultraviolet p-i-n photodetector array. The devices exhibit very low dark current, the mean dark current density is /spl sim/4 nA/cm/sup 2/ at 5-V reverse bias, and the dark current distribution is very uniform (/spl sim/98% of the devices exhibit dark current density
ISSN:0018-9197
1558-1713
DOI:10.1109/3.890260