Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers

Design considerations for low-threshold 1.5- mu m lasers using compressive-strained quantum wells are discussed. Parameters include transparency current density, maximum modal gain, bandgap wavelength, and carrier confinement. The optical confinement for a thin quantum well in the separate-confineme...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1991-06, Vol.27 (6), p.1440-1450
Main Authors: Zah, C.-E., Bhat, R., Favire, F.J., Menocal, S.G., Andreadakis, N.C., Cheung, K.-W., Hwang, D.-M.D., Koza, M.A., Lee, T.-P.
Format: Article
Language:English
Subjects:
Capacitive sensors
Carrier confinement
Current density
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optical design
Optical losses
Optical waveguides
Optics
Photonic band gap
Physics
Quantum well lasers
Semiconductor lasers
laser diodes
Threshold current
Waveguide lasers
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Summary:Design considerations for low-threshold 1.5- mu m lasers using compressive-strained quantum wells are discussed. Parameters include transparency current density, maximum modal gain, bandgap wavelength, and carrier confinement. The optical confinement for a thin quantum well in the separate-confinement heterostructure (SCH) and the step graded-index separate-confinement heterostructure (GRINSCH) are analyzed and compared. 1.5- mu m compressive-strained multiple- and single-quantum-well lasers have been fabricated and characterized. As a result of the compressive strain, the threshold current density is loss limited instead of transparency limited. By the use of the step graded-index separate-confinement heterostructure to reduce the waveguide loss, a low threshold current density of 319 A/cm/sup 2/ was measured on compressive-strained single-quantum-well broad-area lasers with a 27 mu oxide stripe width.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.89961