Finite element analysis of SiGe heterojunction devices

Two SiGe devices, a n/sup +/-n-p heterojunction diode and an n-p-n HBT have been analyzed using a two-dimensional bipolar device simulator which is based on the finite element method. The various shape functions used in the finite element formulations have been detailed. The dependence of the device...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 1995-07, Vol.14 (7), p.803-814
Main Authors: Krishna, G.H.R., Aditya, A.K., Chakrabarti, N.B., Banerjee, S.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Compound structure devices
Electron mobility
Electronics
Exact sciences and technology
Finite element methods
Germanium silicon alloys
Heterojunction bipolar transistors
Photonic band gap
Poisson equations
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon alloys
Silicon germanium
Temperature
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Summary:Two SiGe devices, a n/sup +/-n-p heterojunction diode and an n-p-n HBT have been analyzed using a two-dimensional bipolar device simulator which is based on the finite element method. The various shape functions used in the finite element formulations have been detailed. The dependence of the device characteristics on the various Ge mole-fraction material parameters has been studied. The variation of current gain of SiGe HBT with temperature is discussed.< >
ISSN:0278-0070
1937-4151
DOI:10.1109/43.391728