SITAR-an efficient 3-D simulator for optimization of nonplanar trench structures

A 3-D device simulator which allows the investigation of the electrical behavior of nonplanar trench-type device structures is presented. It has been used to analyze leakage due to punchthrough between neighboring trench capacitors, depending on geometry and doping profiles. Using an analytical mode...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 1990-11, Vol.9 (11), p.1184-1188
Main Authors: Bergner, W., Kircher, R.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Capacitors
Conductors
Current density
Doping profiles
Electronics
Equations
Exact sciences and technology
Finite difference methods
Geometry
Integrated circuits
Integrated circuits by function (including memories and processors)
Material storage
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
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Summary:A 3-D device simulator which allows the investigation of the electrical behavior of nonplanar trench-type device structures is presented. It has been used to analyze leakage due to punchthrough between neighboring trench capacitors, depending on geometry and doping profiles. Using an analytical model to estimate the leakage current and a completely vectorized solution algorithm for all three semiconductor equations, the program proved to be a very efficient tool for optimizing the cell size of 4- and 16-Mb DRAMs.< >
ISSN:0278-0070
1937-4151
DOI:10.1109/43.62755