Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

A theoretical model for the frequency response of InP/InGaAs avalanche photodiodes (APDs) is presented. Included in the analysis are resistive, capacitive, and inductive parasitics, transit-time factors, hole trapping at the heterojunction interfaces, and the avalanche buildup time. The contribution...

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Bibliographic Details
Published in:Journal of lightwave technology 1989-05, Vol.7 (5), p.778-784
Main Authors: Campbell, J.C., Johnson, B.C., Qua, G.J., Tsang, W.T.
Format: Article
Language:English
Subjects:
360601 - Other Materials- Preparation & Manufacture
360603 - Materials- Properties
656001 - Condensed Matter Physics- Solid-State Plasma
656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)
AMPLIFICATION
Applied sciences
ARSENIC COMPOUNDS
ARSENIDES
Avalanche photodiodes
CALCULATION METHODS
Charge carrier processes
CHEMICAL COMPOSITION
COMPUTERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DATA
Electron traps
ELECTRON-HOLE COUPLING
ELECTRONIC CIRCUITS
Electronics
ELECTRONS
ELEMENTARY PARTICLES
EMISSION SPECTRA
EPITAXY
Exact sciences and technology
FERMIONS
Frequency measurement
Frequency response
FREQUENCY RESPONSE TESTING
Frequency synthesizers
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
Indium gallium arsenide
Indium phosphide
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LEPTONS
MATERIALS SCIENCE
MEASURING METHODS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
NUMERICAL DATA
OPTICAL PROPERTIES
Optoelectronic devices
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMICONDUCTOR JUNCTIONS
SPECTRA
Spectral analysis
TESTING
THEORETICAL DATA
TRAPPED ELECTRONS
VAPOR PHASE EPITAXY
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Summary:A theoretical model for the frequency response of InP/InGaAs avalanche photodiodes (APDs) is presented. Included in the analysis are resistive, capacitive, and inductive parasitics, transit-time factors, hole trapping at the heterojunction interfaces, and the avalanche buildup time. The contributions of the primary electrons, primary holes, and secondary electrons to the transit-time-limited response are considered separately. Using a measurement apparatus which consists of a frequency synthesizer and a spectrum analyzer controlled by a microcomputer, the frequency response of InP/InGaAsP/InGaAs APDs grown by chemical-beam epitaxy are measured. Good agreement with the calculated response has been obtained over a wide range of gains.< >
ISSN:0733-8724
1558-2213
DOI:10.1109/50.19113