Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETs

The authors report the direct measurement of the silicon island temperature in both long and submicrometer thin-film silicon-on-insulator (SOI) MOSFETs as a function of bias conditions using noise thermometry. They show that the device island temperature increases with drain voltage and that this re...

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Bibliographic Details
Published in:IEEE electron device letters 1992-05, Vol.13 (5), p.279-281
Main Authors: Bunyan, R.J.T., Uren, M.J., Alderman, J.C., Eccleston, W.
Format: Article
Language:English
Subjects:
Applied sciences
Circuits
Electrical resistance measurement
Electronics
Exact sciences and technology
Immune system
MOSFETs
Noise measurement
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Temperature
Thermal resistance
Transistors
Voltage
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Summary:The authors report the direct measurement of the silicon island temperature in both long and submicrometer thin-film silicon-on-insulator (SOI) MOSFETs as a function of bias conditions using noise thermometry. They show that the device island temperature increases with drain voltage and that this results in a reduction of drain current. Using standard models of the drain current and velocity/field expression, they show that a thermally induced fall in mobility quantitatively accounts for the loss in drain current drive observed.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.145053