Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors

GaInP/GaAs heterojunction bipolar transistors (HBTs) have been fabricated and these devices exhibit near-ideal I-V characteristics with very small magnitudes of the base-emitter junction space-charge recombination current. Measured current gains in both 6- mu m*6- mu m and 100- mu m*100- mu m device...

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Bibliographic Details
Published in:IEEE electron device letters 1992-10, Vol.13 (10), p.510-512
Main Authors: Liu, W., Fan, S.-K.
Format: Article
Language:English
Subjects:
Applied sciences
Area measurement
Breakdown voltage
Current density
Current measurement
Density measurement
Doping
Electronics
Exact sciences and technology
Gain measurement
Gallium arsenide
Heterojunction bipolar transistors
Microwave devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:GaInP/GaAs heterojunction bipolar transistors (HBTs) have been fabricated and these devices exhibit near-ideal I-V characteristics with very small magnitudes of the base-emitter junction space-charge recombination current. Measured current gains in both 6- mu m*6- mu m and 100- mu m*100- mu m devices remain constant for five decades of collector current and are greater than unity at ultrasmall current densities on the order of 1*10/sup -6/ A/cm/sup 2/. For the 6- mu m*6- mu m device, the current gain reaches a high value of 190 at higher current levels. These device characteristics are also compared to published data of an abrupt AlGaAs/GaAs HBT having a base layer with similar doping level and thickness.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.192817