A low on-resistance, high-current GaAs power VFET

We have developed a new fabrication process for GaAs VFETs that results in excellent performance in a 10 A prototype designed for switching in low voltage synchronous rectifier applications. The new fabrication process uses a buried carbon-doped GaAs gate structure for the gate electrodes and an epi...

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Bibliographic Details
Published in:IEEE electron device letters 1995-04, Vol.16 (4), p.142-144
Main Authors: Plumton, D.L., Yuan, H.T., Kim, T.S., Taddiken, A.H., Ley, V., Kollman, R.L., Lagnado, I., Johnson, L.
Format: Article
Language:English
Subjects:
Applied sciences
Contact resistance
Doping profiles
Electrodes
Electronics
Etching
Exact sciences and technology
Fabrication
Gallium arsenide
Low voltage
Other multijunction devices. Power transistors. Thyristors
Power supplies
Rectifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
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Description
Summary:We have developed a new fabrication process for GaAs VFETs that results in excellent performance in a 10 A prototype designed for switching in low voltage synchronous rectifier applications. The new fabrication process uses a buried carbon-doped GaAs gate structure for the gate electrodes and an epitaxial overgrowth step. We have demonstrated 10 A devices with 3.5 cm of gate width and 1.5 mohm of on-resistance (specific on-resistance of 84 μohm-cm 2 ). The device required a 0.5 μm channel etched between 0.5 μm gates placing stringent requirements on the gate side wall etch profile and epitaxial doping uniformity.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.372495