A recessed-gap capacitive-gate GaAs CCD

A MESFET-compatible structure for GaAs capacitive-gate CCDs that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication is presented. This recessed-gap structure solves problems of low gate-channel-gate breakdown and large parasitic gate-to-gate capacitance...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 1989-12, Vol.10 (12), p.525-527
Main Authors: Colbeth, R.E., Song, J.-I., Rossi, D.V., Fossum, E.R.
Format: Article
Language:English
Subjects:
Applied sciences
Charge coupled devices
Charge transfer devices
Clocks
Doping
Electrodes
Electronics
Exact sciences and technology
Fabrication
Gallium arsenide
MESFETs
Photonic band gap
Poisson equations
Potential well
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A MESFET-compatible structure for GaAs capacitive-gate CCDs that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication is presented. This recessed-gap structure solves problems of low gate-channel-gate breakdown and large parasitic gate-to-gate capacitance associated with ultrasmall gaps. Dark current is also reduced. Modeling and experimental results are reported.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.43128