Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)

An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior results from a sequential avalanche multiplication and two-stage barrier lowering effect...

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Bibliographic Details
Published in:IEEE electron device letters 1996-03, Vol.17 (3), p.130-132
Main Authors: Liu, Wen-Chau, Tsai, Jung-Hui, Lour, Wen-Shiung, Laih, Lih-Wen, Thei, Kong-Beng, Wu, Cheng-Zu
Format: Article
Language:English
Subjects:
Bipolar transistors
Charge carrier processes
Current density
Etching
Fabrication
Gallium arsenide
Heterojunction bipolar transistors
Sea surface
Voltage
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Summary:An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior results from a sequential avalanche multiplication and two-stage barrier lowering effect. The two-stage barrier lowering effect is assumed to be caused by the high valence-band-discontinuity (/spl Delta/E/sub v/) to conduction-band-discontinuity (/spl Delta/E/sub c/) ratio at InGaP/GaAs heterointerface which gives holes and electrons accumulation effect successively. Under normal operation mode, a typical common-emitter current gain of 60 is obtained at collector current density of 400 A/cm/sup 2/ for the studied HEBT without emitter-edge thinning structure. Consequently, the controlled switching and transistor performances provide a promise of the studied device for circuit applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.485190