Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors

The avalanche process in the collector of abrupt Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors (HBTs) is reported. It is reported that the collector multiplication constant decreases monotonically with increasing base thickness. When the base thickness is...

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Bibliographic Details
Published in:IEEE electron device letters 1990-09, Vol.11 (9), p.400-402
Main Authors: Jalali, B., Chen, Y.-K., Nottenburg, R.N., Sivco, D., Humphrey, D.A., Cho, A.Y.
Format: Article
Language:English
Subjects:
Applied sciences
Artificial intelligence
Bipolar transistors
Doping
Electric breakdown
Electronics
Electrons
Exact sciences and technology
Heterojunction bipolar transistors
Impact ionization
Indium gallium arsenide
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Voltage
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Summary:The avalanche process in the collector of abrupt Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors (HBTs) is reported. It is reported that the collector multiplication constant decreases monotonically with increasing base thickness. When the base thickness is less than the mean-free path for energy relaxation in the base, the avalanche process in the collector is enhanced by high-energy injection from the emitter. On the other hand, no such dependence is observed for long-base transistors with equilibrium base transport. These effects are expected as the emitter injection energy of 0.48 eV is appreciable compared to the impact ionization threshold of 0.83 eV in the InGaAs collector.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.62969