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A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology
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Published in: | IEEE electron device letters 1998-03, Vol.19 (3), p.77-79 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
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cited_by | cdi_FETCH-LOGICAL-c740-55e1b72c7aabb36929face81b235d5abb0a7f2a7ba352a45bf98f7281b640af73 |
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cites | cdi_FETCH-LOGICAL-c740-55e1b72c7aabb36929face81b235d5abb0a7f2a7ba352a45bf98f7281b640af73 |
container_end_page | 79 |
container_issue | 3 |
container_start_page | 77 |
container_title | IEEE electron device letters |
container_volume | 19 |
creator | Lee, Q. Agarwal, B. Mensa, D. Pullela, R. Guthrie, J. Samoska, L. Rodwell, M.J.W. |
description | |
doi_str_mv | 10.1109/55.661170 |
format | article |
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ispartof | IEEE electron device letters, 1998-03, Vol.19 (3), p.77-79 |
issn | 0741-3106 1558-0563 |
language | eng |
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source | IEEE Xplore (Online service) |
title | A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology |
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