Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFETs by electrochemical etching

We show that by making full use of the features of electrochemical etching in InAlAs/InGaAs heterostructures, deep gate grooves with small side etching can be fabricated. The most important advantage of this technology is that the vertical etching in the small gate openings will be remarkably enhanc...

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Bibliographic Details
Published in:IEEE electron device letters 1998-12, Vol.19 (12), p.484-486
Main Authors: Dong Xu, Enoki, T., Umeda, Y., Suemitsu, T., Yamane, Y., Ishii, Y.
Format: Article
Language:English
Subjects:
Degradation
Fabrication
FETs
HEMTs
Heterojunctions
Indium compounds
Indium gallium arsenide
MODFETs
Transconductance
Wet etching
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Summary:We show that by making full use of the features of electrochemical etching in InAlAs/InGaAs heterostructures, deep gate grooves with small side etching can be fabricated. The most important advantage of this technology is that the vertical etching in the small gate openings will be remarkably enhanced by a self-organized process. Therefore the electrochemical etching provides a what we call "self-compensation" of the short channel effects. The effectiveness of this technology is evidenced by the excellent performance combined with the alleviation of the threshold-voltage shift and suppression of transconductance degradation in MODFET's with gate lengths below 0.1 μm.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.735754