Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (

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Bibliographic Details
Published in:IEEE electron device letters 2000-04, Vol.21 (4), p.170-172
Main Authors: Zhigang Wang, Parker, C.G., Hodge, D.W., Croswell, R.T., Nian Yang, Misra, V., Hauser, J.R.
Format: Article
Language:English
Subjects:
Annealing
Boron
Charge
CMOS technology
Devices
Dielectric materials
Electric potential
Fermi surfaces
Furnaces
Gates
MOSFET circuits
Permittivity
Plasma sources
Silicon
Stacks
Voltage
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Description
Summary:In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (
ISSN:0741-3106
1558-0563
DOI:10.1109/55.830971