Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides

We report that voltage acceleration of time- or charge-to-breakdown is insensitive to temperature variations over a wide range of temperature (30 to 200/spl deg/C) for oxides below 3 nm, regardless of oxide process, injection polarity or device type (NFET, PFET). Based on this observation, an essent...

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Bibliographic Details
Published in:IEEE electron device letters 2000-07, Vol.21 (7), p.362-364
Main Authors: Wu, E.Y., Harmon, D.L., Liang-Kai Han
Format: Article
Language:English
Subjects:
Acceleration
Breakdown
Breakdown voltage
Capacitors
Devices
Dielectrics
Electric breakdown
Electric potential
Oxides
Polarity
Projection
Quantum mechanics
Substrates
Temperature dependence
Temperature distribution
Voltage
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Summary:We report that voltage acceleration of time- or charge-to-breakdown is insensitive to temperature variations over a wide range of temperature (30 to 200/spl deg/C) for oxides below 3 nm, regardless of oxide process, injection polarity or device type (NFET, PFET). Based on this observation, an essentially universal, non-Arrhenius temperature dependence for ultrathin oxide is obtained by a natural normalization scheme. The consequences of these findings for reliability projection are discussed.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.847381