Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes

4H-SiC p/sup +/-n-n/sup +/ diodes of low series resistivity (

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Bibliographic Details
Published in:IEEE electron device letters 2000-10, Vol.21 (10), p.485-487
Main Authors: Vassilevski, K.V., Zekentes, K., Zorenko, A.V., Romanov, L.P.
Format: Article
Language:English
Subjects:
Avalanche breakdown
Breakdown voltage
Conductivity
Diodes
Electrical resistance measurement
Electron mobility
Packaging
Pulse measurements
Temperature distribution
Thermal resistance
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Description
Summary:4H-SiC p/sup +/-n-n/sup +/ diodes of low series resistivity (
ISSN:0741-3106
1558-0563
DOI:10.1109/55.870609